JAN1N5186中文资料Rectifier Diode Switching 2-Pin 100V, 3A, 150ns B-body数据手册Microchip规格书

描述 Description

This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category 1” metallurgical bond. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

特性 Features

JEDEC registered 1N5186 thru 1N5190 series
Voidless hermetically sealed glass package
Working Peak Reverse Voltage 100 to 600 volts
Internal “Category I” metallurgical bond
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/424
RoHS compliant versions available (commercial grade only)
Fast recovery 3 amp 100 to 600 volt rectifiers
Military and other high-reliability applications
General rectifier applications including bridges, half-bridges, catch diodes, etc
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power capability
Inherently radiation hard as described in Microchip “MicroNote 050”.

简介

JAN1N5186属于分立半导体产品的二极管-齐纳-单。由制造生产的JAN1N5186二极管 - 齐纳 - 单齐纳二极管可用于以反向击穿模式工作，并根据以这种方式使用时的行为来分类。这些器件可用作电压基准或限压用途，还可以用作类似于整流二极管的单向电流阀，但它们在这种模式下的性能通常不如专用器件理想。该系列产品的每个器件封装恰好实现该功能的一个实例。