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JAN1N2999R

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RA

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RB

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RC

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RD

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N2999RB

包装:散装 封装/外壳:DO-203AA,DO-4,接线柱 类别:分立半导体产品 二极管 - 齐纳 - 单 描述:ZENER DIODE

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

1N2999

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2999

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N2999

ZENERDIODES

ZENERDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N2999

10WZenerDiodes

AMERICASEMI

America Semiconductor, LLC

1N2999

Glasspassivatedjunction

Features ●Glasspassivatedjunction ●Goodclampingability ●AvailableinNormalandReversepolarity ●MetricandUNFthreadtype ElectricalData ●DCPowerDissipation:10Watts ●VoltageRange6.8–200Volts ●Operatingtemperature-65°Cto+175°C ●Derating:80mW/oCabove50°C ●

AMERICASEMI

America Semiconductor, LLC

1N2999A

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N2999A

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2999AR

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N2999B

ZenerDiodes

NAINA

Naina Semiconductor ltd.

1N2999B

10WZENERDIODE6.8VOLTSTO200VOLTS5TOLERANCE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N2999B

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

1N2999B

SILICON10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinking

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2999B

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N2999B

Silicon10WATTZenerDiodes

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

详细参数

  • 型号:

    JAN1N2999R

  • 制造商:

    MICROSEMI

  • 制造商全称:

    Microsemi Corporation

  • 功能描述:

    10 WATT ZENER DIODES

供应商型号品牌批号封装库存备注价格
MSC
16+
MODULE
2100
公司大量全新现货 随时可以发货
询价
CBY
19
全新原装 货期两周
询价
MICROSEMI
638
原装正品
询价
Microchip
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
MSC
24+25+/26+27+
车规-模块MODULE
1880
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
MSC
23+
65480
询价
MSC/MOTOROLA
21+ROHS
MODULE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MSC
16+
DO-4
10
原装现货假一罚十
询价
更多JAN1N2999R供应商 更新时间2024-5-18 9:30:00