SWITCHING P-CHANNEL POWER MOS FET

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 130 mΩMAX. (VGS= –10 V, ID= –6 A) RDS(on)2= 190 mΩMAX. (VGS= –4.0 V, ID= –6 A) •Low

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NEC

瑞萨

Silicon Rectifier Ultra Fast, 600V, 8A

Description: The NTE598 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching power supplies, inverters and as free wheeling diodes. Features: ● Ultrafast 50ns Recovery Time ● 175°C Operating Junction Temperature ● Popular TO220 Package ● Epoxy meets UL94, VO @

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NTE

RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION The SD1448 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V. Gold metallization and emitter ballasting assure high reliability under Class A linear amplifier operation. ■ 860 MHz ■ 25 VOLTS

文件：71.23 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. • Band IV and V (470–860 MHz) • 4.0 W — Pref @ –60 dB IMD • 25 V — VC

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MOTOROLA

摩托罗拉