KD413MEKCJEWG

KD41CANbusPressureTransduce

FEATURES „OptionalControllerAreaNetwork(CAN)communicationprotocolsavailable: •CANopen®2.0A •CANopen®2.0B •CANSAE®J1939 „Ranges5to20,000psi „Mediatemperaturerange-40°Cto125°C „Compactandrobuststainlesssteeldesign „Wideselectionofprocessandelectricalc

KD413MEKCNEWG

KD41CANbusPressureTransduce

FEATURES „OptionalControllerAreaNetwork(CAN)communicationprotocolsavailable: •CANopen®2.0A •CANopen®2.0B •CANSAE®J1939 „Ranges5to20,000psi „Mediatemperaturerange-40°Cto125°C „Compactandrobuststainlesssteeldesign „Wideselectionofprocessandelectricalc

KD413MEVCJEWG

KD41CANbusPressureTransduce

FEATURES „OptionalControllerAreaNetwork(CAN)communicationprotocolsavailable: •CANopen®2.0A •CANopen®2.0B •CANSAE®J1939 „Ranges5to20,000psi „Mediatemperaturerange-40°Cto125°C „Compactandrobuststainlesssteeldesign „Wideselectionofprocessandelectricalc

KD413MEVCNEWG

KD41CANbusPressureTransduce

FEATURES „OptionalControllerAreaNetwork(CAN)communicationprotocolsavailable: •CANopen®2.0A •CANopen®2.0B •CANSAE®J1939 „Ranges5to20,000psi „Mediatemperaturerange-40°Cto125°C „Compactandrobuststainlesssteeldesign „Wideselectionofprocessandelectricalc

KD413MGACJEWG

KD41CANbusPressureTransduce

FEATURES „OptionalControllerAreaNetwork(CAN)communicationprotocolsavailable: •CANopen®2.0A •CANopen®2.0B •CANSAE®J1939 „Ranges5to20,000psi „Mediatemperaturerange-40°Cto125°C „Compactandrobuststainlesssteeldesign „Wideselectionofprocessandelectricalc

KD413MGACNEWG

KD41CANbusPressureTransduce

FEATURES „OptionalControllerAreaNetwork(CAN)communicationprotocolsavailable: •CANopen®2.0A •CANopen®2.0B •CANSAE®J1939 „Ranges5to20,000psi „Mediatemperaturerange-40°Cto125°C „Compactandrobuststainlesssteeldesign „Wideselectionofprocessandelectricalc

KOD413

P-ChannelMOSFET

■Features ●VDS(V)=-40V ●ID=-12A(VGS=-10V) ●RDS(ON)

KRC413

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES •WithBuilt-inBiasResistors. •SimplifyCircuitDesign. •ReduceaQuantityofPartsandManufacturingProcess. •HighPackingDensity.

KRC413E

SEMICONDUCTOR

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES •WithBuilt-inBiasResistors. •SimplifyCircuitDesign. •ReduceaQuantityofPartsandManufacturingProcess. •HighPackingDensity.

KRC413V

SEMICONDUCTOR

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES •WithBuilt-inBiasResistors. •SimplifyCircuitDesign. •ReduceaQuantityofPartsandManufacturingProcess. •HighPackingDensity.