BVSS138LT3G

Marking：J1M；Package：SOT-23；MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features •LowThresholdVoltage(VGS(th):0.85V−1.5V)MakesitIdealfor LowVoltageApplications •MiniatureSOT−23SurfaceMountPackageSavesBoardSpace •HBMClass0A,MMClassM1A,CDMClassIV(Note3) •BVSSPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandCo

ESD12V12D-HC

Marking：J12B；Package：SOD-123FLT；Transient Voltage Suppressors for ESD Protection

Features 3600Wto6600Wpeakpulsepowerdissipationat 1.2/50μs-8/20μs@2Ωwaveform. Forsmallsurfacemountedapplications. Responsetimeistypically

ESD15V12D-HC

Marking：J15B；Package：SOD-123FLT；Transient Voltage Suppressors for ESD Protection

Features 3600Wto6600Wpeakpulsepowerdissipationat 1.2/50μs-8/20μs@2Ωwaveform. Forsmallsurfacemountedapplications. Responsetimeistypically

ESD18V12D-HC

Marking：J18B；Package：SOD-123FLT；Transient Voltage Suppressors for ESD Protection

Features 3600Wto6600Wpeakpulsepowerdissipationat 1.2/50μs-8/20μs@2Ωwaveform. Forsmallsurfacemountedapplications. Responsetimeistypically

FJAFS1510ATU

Marking：J1510A；Package：TO-3PF；ESBC Rated NPN Power Transistor

Description TheFJAFS1510Aisalow-cost,high-performancepowerswitchdesignedtoprovideoptimalperformancewhenusedinanESBC™configurationinapplicationssuchas:powersupplies,motordrivers,smartgrid,orignitionswitches.Thepowerswitchisdesignedtooperateupto1550voltsan

KSA1298

Marking：J1*；Package：SOT-23；Low Frequency Power Amplifier

LowFrequencyPowerAmplifier •ComplementtoKSC3265

QS8J13

Marking：J13；Package：TSMT8；Small Surface Mount Package

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

RT9166-33PX

Marking：J1-；Package：SOT-23；300/600mA, Ultra-Fast Transient Response LDO Regulator

GeneralDescription TheRT9166/AseriesareCMOSlowdropoutregulatorsoptimizedforultra-fasttransientresponse.Thedevicesarecapableofsupplying300mAor600mAofoutputcurrentwithadropoutvoltageof230mVor580mVrespectively. Features •LowQuiescentCurrent(Typically220μA) •

US6J12

Marking：J12；Package：SOT-363T；-12V PchPch Small Signal MOSFET

lFeatures 1)Lowon-resistance 2)Built-inG-SProtectionDiode 3)SmallSurfaceMountPackage(TUMT6) 4)Pb-freeleadplating;RoHScompliant lApplication Switching

ZC830

Marking：J1S；Package：SOT-23；SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23SILICONVARIABLECAPACITANCE FEATURES *CloseToleranceC-VCharacteristics *HighTuningRatio *LowIREnablingExcellentPhaseNoisePerformance(IRTypically