Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET 600V 18A TO-247

IXYS-RF

Z-MOS RF Power MOSFET

VDSS = 600 V ID25 = 18 A RDS(on) ≤ 0.56 Ω PDC = 350 Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Incre

文件：169.47 Kbytes 页数：4 Pages

IXYS

艾赛斯

Z-MOS RF Power MOSFET

VDSS = 600 V ID25 = 18 A RDS(on) ≤ 0.56 Ω PDC = 350 Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Incre

文件：169.47 Kbytes 页数：4 Pages

IXYS

艾赛斯

Z-MOS RF Power MOSFET

VDSS = 600 V ID25 = 18 A RDS(on) ≤ 0.56 Ω PDC = 350 Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Incre

文件：169.47 Kbytes 页数：4 Pages

IXYS

艾赛斯