| 订购数量 | 价格 |
|---|---|
| 1+ |
IXTH35N30_IXYS/艾赛斯_MegaMOSTMFET得捷芯城科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 制造商编号
:IXTH35N30
- Maximum Power Dissipation
:300000mW
- Maximum Gate Source Voltage
:±20V
- Maximum Drain Source Voltage
:300V
- Maximum Continuous Drain Current
:35A
- Material
:Si
- Configuration
:Single
- Channel Type
:N
- Channel Mode
:Enhancement
- Category
:Power MOSFET
供应商
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