IXGN50N60BD3分立半导体产品的晶体管-IGBT-模块规格书PDF中文资料

IXGN50N60BD3属于分立半导体产品的晶体管-IGBT-模块。由艾赛斯制造生产的IXGN50N60BD3晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。

HiPerFAST™ IGBT with HiPerFRED

Buck & boost configurations

特性 Features

• International standard package miniBLOC

• Aluminium nitride isolation

- high power dissipation

• Isolation voltage 3000 V~

• Very high current, fast switching IGBT & FRED diode

• MOS Gate turn-on - drive simplicity

• Low collector-to-case capacitance

• Low package inductance (< 10 nH)

- easy to drive and to protect

• Molding epoxies meet UL94V-0 flammability classification

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Buck converters

Advantages

• Easy to mount with 2 screws

• Space savings

• High power density