IXGH15N120C分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

IXGH15N120C属于分立半导体产品的晶体管-UGBT、MOSFET-单。由艾赛斯制造生产的IXGH15N120C晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

VCES = 1200 V

IC25 = 30 A

VCE(sat) = 3.8 V

tfi(typ) = 115 ns

特性 Features

• International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD

• Low switching losses

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode power supplies

Advantages

• High power density

• Suitable for surface mounting

• Easy to mount with 1 screw, (mounting screw hole)