High Current Power MOSFET

N-Channel Enhancement Mode

Features

• International standard package

• Isolation voltage 3000V (RMS)

• Low RDS (on) HDMOSTM processl

• Rugged polysilicon gate cell structure

• Low drain-to-case capacitance (<60 pF)

- reduced RFI

• Low package inductance (< 10 nH)

- easy to drive and to protect

• Aluminium Nitride Isolation

- increased current ratings

Applications

• DC choppers

• AC motor speed controls

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switched mode and resonant mode power supplies

Advantages

• Easy to mount

• Space savings

• High power density