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首页>IXFH150N20T>详情
IXFH150N20T_IXYS/艾赛斯_MOSFET Trench HiperFETs Power MOSFETs威尔健半导体
- 详细信息
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产品属性
- 类型
描述
- 制造商编号
:IXFH150N20T
- 生产厂家
:力特
- Maximum On-Resistance @ 25 ℃ (Ohm)
:0.015
- Continuous Drain Current @ 25 ℃ (A)
:150
- Gate Charge (nC)
:177
- Thermal resistance [junction-case](K/W)
:0.14
- Configuration
:Single
- Package Type
:TO-247
- Typical Reverse Recovery Time (ns)
:100
- Power Dissipation (W)
:890
- Sample Request
:No
- Check Stock
:Yes
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