IXDN55N120D1分立半导体产品的晶体管-IGBT-模块规格书PDF中文资料

IXDN55N120D1属于分立半导体产品的晶体管-IGBT-模块。由艾赛斯制造生产的IXDN55N120D1晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。

High Voltage IGBT with optional Diode

Short Circuit SOA Capability

Square RBSOA

特性 Features

● NPT IGBT technology

● low saturation voltage

● low switching losses

● square RBSOA, no latch up

● high short circuit capability

● positive temperature coefficient for easy paralleling

● MOS input, voltage controlled

● optional ultra fast diode

● International standard package miniBLOC

Advantages

● Space savings

● Easy to mount with 2 screws

● High power density

Typical Applications

● AC motor speed control

● DC servo and robot drives

● DC choppers

● Uninteruptible power supplies (UPS)

● Switch-mode and resonant-mode power supplies