IXDI630数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The IXDD6301XDI630/1XDN630 high-speed gate drivers are especially well suited for driving the latest IXYS power MOSFETs and IGBTs. The IXD_630 output can source and sink 30A of peak current while producing voltage rise and fall times of less than 20ns. Internal circuitry eliminates cross conduction and current \"shoot-through,\"and the driver is virtually immune to latch up. Under-voltage lockout(UVLO) circuitry holds the output LOW until sufficient supply voltage is applied (12.5V for the IXD_630 versions, and 9V for the IXD_630M versions). Low propagation delays and fast, matched rise and fall times make the IXD_630 family ideal for very high frequency and high-power applications.\r
\r
The IXDD630 is configured as a non-inverting driver with an enable. The IXDN630 is configured as a non-inverting driver, and the IXDI630 is configured as an inverting driver.\r
\r
The IXD_630 family is available in a 5-pin TO-220(C), and a 5-pin TO-263(Yl) package.

特性 Features

• 30A Peak Source/Sink Drive Current\r
• High Operating Voltage Capability: 35V\r
• -40°C to +125°C Extended Operating Temperature Range\r
• Under-Voltage Lockout Protection\r
• Logic Input Withstands Negative Swing of up to 5V\r
• Fast Rise and Fall Times: < 20ns\r
• Low Propagation Delay Time\r
• Low 10A Supply Current\r
• Low Output Impedance

应用 Application

• Efficient Power MOSFET and IGBT Switching\r
• Switch Mode Power Supplies\r
• Motor Controls\r
• DC to DC Converters\r
• Class-D Switching Amplifiers\r
• Pulse Transformer Driver