IXDI414YI集成电路(IC)的栅极驱动器规格书PDF中文资料

厂商型号 |
IXDI414YI |
参数属性 | IXDI414YI 封装/外壳为TO-263-6,D²Pak(5 引线 + 接片),TO-263BA;包装为卷带(TR);类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR LOW-SIDE TO263 |
功能描述 | 14 Ampere Low-Side Ultrafast MOSFET Drivers |
封装外壳 | TO-263-6,D²Pak(5 引线 + 接片),TO-263BA |
文件大小 |
241.25 Kbytes |
页面数量 |
10 页 |
生产厂商 | IXYS |
网址 | |
数据手册 | |
更新时间 | 2025-8-6 19:10:00 |
人工找货 | IXDI414YI价格和库存,欢迎联系客服免费人工找货 |
IXDI414YI规格书详情
IXDI414YI属于集成电路(IC)的栅极驱动器。由IXYS Corporation制造生产的IXDI414YI栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能,这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备(通常为 FET 或 IGBT)。任何特定设备提供的确切功能各不相同,但与它适合驱动的半导体配置相关。
General Description
The IXDI414/IXDN414 is a high speed high current gate driver specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDI/N414 can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, a patent-pending circuit virtually eliminates transistor cross conduction and current shootthrough. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times.
特性 Features
• Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected Over Entire Operating Range
• High Peak Output Current: 14A Peak
• Wide Operating Range: 4.5V to 25V
• High Capacitive Load Drive Capability: 15nF in <30ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
产品属性
更多- 产品编号:
IXDI414YI
- 制造商:
IXYS
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
卷带(TR)
- 驱动配置:
低端
- 通道类型:
单路
- 栅极类型:
IGBT,N 沟道,P 沟道 MOSFET
- 电压 - 供电:
4.5V ~ 35V
- 逻辑电压 - VIL,VIH:
0.8V,3.5V
- 电流 - 峰值输出(灌入,拉出):
14A,14A
- 输入类型:
反相
- 上升/下降时间(典型值):
22ns,20ns
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-263-6,D²Pak(5 引线 + 接片),TO-263BA
- 供应商器件封装:
TO-263-5
- 描述:
IC GATE DRVR LOW-SIDE TO263
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
IXYS |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
询价 | ||
D/C |
23+ |
DC |
35200 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IXYS |
25+ |
TO-263-6 D?Pak(5 引线 + 接片 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
IXYS |
22+ |
TO263 (D2Pak) |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
23+24 |
5-leaded,TO-263 |
28650 |
原装原盘原标,提供BOM一站式配单 |
询价 | ||
IXYS |
23+ |
TO-263 |
8000 |
只做原装现货 |
询价 | ||
IXYS |
23+ |
TO-263 |
7000 |
询价 | |||
IXYS |
24+ |
TO-263(D2Pak) |
65200 |
一级代理/放心采购 |
询价 | ||
IXYS |
25+ |
TO-263D2Pak |
4258 |
原装正品 价格优势 |
询价 |