Thyristor Module

FEATURES ·Pressure contact technology for high reliability ·Industial standard package ·Electrically insulated baseplate APPLICATIONS ·Rectifier for Drives Applications ·Rectifiers for UBS ·Battery chargers ·Soft starter ·Power controllers

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ISC

无锡固电

Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS

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NAND gates provide the system designer with direct implementation of the NAND function

Description The IW4011B NAND gates provide the system designer with direct implementation of the NAND function. Features • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 at 18 V over full package-temperature range 100 nA at 18 V and 25°C • Noise margin (over full package t

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ESTEK

伊泰克电子

Noise margin

Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 μA at 18 V over full package-temperature range; 100 nA at 18 V and 25°

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