丝印：ISO122U；Package：SOIC；ISO122 Precision Lowest-Cost Isolation Amplifier

1 Features 1• 100% Tested for High-Voltage Breakdown • Rated 1500 Vrms • High IMR: 140 dB at 60 Hz • Bipolar Operation: VO = ±10 V • 16-Pin Plastic DIP and 28-Lead SOIC • Ease of Use: Fixed Unity Gain Configuration • 0.020% Maximum Nonlinearity • ±4.5-V to ±18-V Supply Range 2 A

文件：617.79 Kbytes 页数：27 Pages

TI

德州仪器

ISO122 Precision Lowest-Cost Isolation Amplifier

1 Features 1• 100% Tested for High-Voltage Breakdown • Rated 1500 Vrms • High IMR: 140 dB at 60 Hz • Bipolar Operation: VO = ±10 V • 16-Pin Plastic DIP and 28-Lead SOIC • Ease of Use: Fixed Unity Gain Configuration • 0.020% Maximum Nonlinearity • ±4.5-V to ±18-V Supply Range 2 A

文件：617.79 Kbytes 页数：27 Pages

TI

德州仪器

MONOLITHIC DUAL NPN TRANSISTORS

文件：28.85 Kbytes 页数：2 Pages

LINEAR

Dual NPN General Purpose Amplifier

FEATURES • High hFE at Low Current • Low Output Capacitance • Good Matching • Tight VBE Tracking

文件：70 Kbytes 页数：2 Pages

INTERSIL