Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs

The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output cu

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Intersil

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs

Features • Ultra low dropout: 75mV at 3A, (typical) • Excellent VIN PSRR: 70dB at 1kHz (typical) • ±1.6% assured VOUT accuracy for -40ºC

文件：1.09483 Mbytes 页数：17 Pages

RENESAS

瑞萨

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs

文件：972.08 Kbytes 页数：16 Pages

RENESAS

瑞萨

包装：盒 类别：开发板，套件，编程器 评估板 - 线性稳压器 描述：BOARD EVAL FOR ISL80111

Renesas Electronics America Inc