40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

文件：521.659 Kbytes 页数：13 Pages

RENESAS

瑞萨

200V, 7.5A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo

文件：512.87 Kbytes 页数：13 Pages

RENESAS

瑞萨

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

文件：522.799 Kbytes 页数：13 Pages

RENESAS

瑞萨

8-WFDFN

Renesas Electronics America

上传：深圳市鑫远鹏科技有限公司

DFN-10

INTERSIL

上传：京海半导体(深圳)有限公司