ISL75051SRHFSLASHPROTO中文资料瑞萨数据手册PDF规格书

Features

• DLA SMD 5962-11212

• Output current up to 3.0A at TJ = +150°C

• Output accuracy ±1.5% over MIL temperature range

• Ultra low dropout:

- 65mV (typical) dropout at 1.0A

- 225mV (typical) dropout at 3.0A

• SET mitigation with no added filtering/diodes

• Input supply range: 2.2V to 6.0V

• Fast load transient response

• Shutdown current of 1μA (typical)

• Output adjustable using external resistors

• PSRR 66dB (typical) at 1kHz

• Enable and PGood feature

• Programmable soft-start/inrush current limiting

• Over-temperature shutdown and programmable OCP limits

• Stable with 47μF min tantalum capacitor

• Radiation environment

- High dose rate (50-300rad(Si)/s) . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*

*Product capability established by initial characterization. The

“EH” version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.