ISL75051ASEHEV1Z中文资料瑞萨数据手册PDF规格书

特性 Features

• DLA SMD 5962-11212

• Output current up to 3.0A at TJ = +150°C

• Output accuracy ±1.5 over MIL temperature range

• Ultra low dropout:

• 65mV (typical) dropout at 1.0A

• 225mV (typical) dropout at 3.0A

• SET mitigation with no added filtering/diodes

• Input supply range: 2.2V to 6.0V

• Fast load transient response

• Shutdown current of 10μA (typical)

• Output adjustable using external resistors

• PSRR 66dB (typical) at 1kHz

• Enable and PGood features

• Programmable soft-start/inrush current limiting

• Over-temp shutdown and programmable OCP limits

• Stable with 47μF min tantalum capacitor

• Radiation hardness (ISL75051ASEH only)

• High dose rate (50-300rad(Si)/s): 100krad(Si)

• Low dose rate (≤0.01rad(Si)/s): 50krad(Si)

• Radiation hardness (ISL73051ASEH only)

• Low dose rate (≤0.01rad(Si)/s): 50krad(Si)