ISL73847SEHDEMO2Z中文资料瑞萨数据手册PDF规格书

厂商型号	ISL73847SEHDEMO2Z
功能描述	Radiation Hardened 12V Half-Bridge GaN FET Driver
文件大小	1.63647 Mbytes
页面数量	40 页
生产厂商	RENESAS
中文名称	瑞萨
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-9 11:34:00
人工找货	ISL73847SEHDEMO2Z价格和库存，欢迎联系客服免费人工找货

特性 Features

▪ Qualified to Renesas Rad Hard QML-V Equivalent

Screening and QCI Flow (R34TB0001EU)

• All screening and QCI is in accordance with

MIL-PRF-38535L Class-V

▪ Up to 20V bootstrap voltage half-bridge driver

▪ Programmable 4.5V to 5.5V gate drive voltage

▪ Single tri-level PWM input control

▪ Separate source and sink driver outputs

▪ High-side peak drive: 2A Sourcing, 4A Sinking

▪ Low-side peak drive: 4A Sourcing, 8A Sinking

▪ High and low side programmable dead time control

▪ Highly matched fast propagation delay: 29ns

▪ Full military temperature operation TA = -55°C to

125°C ambient range

▪ TID Rad Hard Assurance (RHA) testing

• LDR (≤ 10mrad(Si)/s): 75krad(Si)

▪ SEE Characterization (see SEE report for details)

• No DSEE with VDD = 20V or PHS = 13.5V at

LET 86MeV·cm2/mg

• No DSEE with VDD = 20V or PHS = 16.5V at

LET 67MeV·cm2/mg

• SEFI <10μm2 at 86MeV·cm2/mg

• No Half-Bridge Shoot-Through SET at LET

86MeV·cm2/mg