ISL73847MDEMO2Z中文资料瑞萨数据手册PDF规格书

厂商型号	ISL73847MDEMO2Z
功能描述	Radiation Tolerant 12V Half-Bridge GaN FET Driver
文件大小	2.42734 Mbytes
页面数量	44 页
生产厂商	RENESAS
中文名称	瑞萨
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-1 11:16:00
人工找货	ISL73847MDEMO2Z价格和库存，欢迎联系客服免费人工找货

特性 Features

▪ Qualified to Renesas Rad Tolerant Screening and

QCI Flow (R34TB0004EU)

▪ Up to 20V bootstrap voltage half-bridge driver

▪ Programmable 4.5V to 5.5V gate drive voltage

▪ Single tri-level PWM input control

▪ Separate source and sink driver outputs

▪ High-side peak drive: 2A Sourcing, 4A Sinking

▪ Low-side peak drive: 4A Sourcing, 8A Sinking

▪ High and low side programmable dead time control

▪ Highly matched fast propagation delay: 29ns

▪ Full military temperature operation TA = -55°C to

125°C ambient range

▪ 20Ld Plastic 5×5mm QFN Package

▪ NiPdAu-Ag Lead finish (Sn-free, Pb-free)

▪ Passes NASA Low Outgassing Specifications

▪ TID Radiation Lot Acceptance Testing

(LDR: ≤ 10mrad(Si)/s)

• ISL71441M30RZ: 30krad(Si)

• ISL71441M50RZ: 50krad(Si)

▪ SEE Characterization

• No DSEE with VDD = 20V, AVCC/PVCC = 6.3V,

and PVIN = 16.5V at LET 46MeV·cm2/mg

• SEFI <10μm2 at 46MeV·cm2/mg

• No Half-Bridge Shoot-Through SET at LET

46MeV·cm2/mg