ISL73444SEHVX中文资料瑞萨数据手册PDF规格书

Features

• Electrically screened to DLA SMD# 5962-13214

• Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer

• <5μs recovery from SEE (LETTH = 86.4MeV•cm2/mg)

• Unity gain stable

• Rail-to-rail input and output

• Wide gain·bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz

• Wide single and dual supply range. . . . . . . . 2.7V to 40V max

• Low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 400μV

• Low current consumption (per amplifier) . . . . . . . 1.1mA, typ

• No phase reversal with input overdrive

• Slew rate

- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/μs

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• ISL70444SEH radiation acceptance (see TID report)

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)

• ISL73444SEH radiation acceptance (see TID report)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)

• SEE hardness (see SEE report for details)

- SEB LETTH (VS = ±21V). . . . . . . . . . . . . . 86.4MeV•cm2/mg

- SEL immune (SOI Process)