Features

• Electrically screened to SMD 5962-15228

• ESD protection on all pins. . . . . . . . . . . . . . . . . . . . . .4kV HBM

• Compatible with ISO11898-2

• Operating supply range . . . . . . . . . . . . . . . . . . . . . 3.0V to 3.6V

• Bus pin fault protection to ±20V

• Undervoltage lockout

• Cold spare: powered-down devices/nodes will not affect

active devices operating in parallel

• Three selectable driver rise and fall times

• Glitch free bus I/O during power-up and power-down

• Full fail-safe (open, short, terminated/undriven) receiver

• Hi-Z input allows for 120 nodes on the bus

• High data rates. . . . . . . . . . . . . . . . . . . . . . . . . . . . up to 5Mbps

• Quiescent supply current . . . . . . . . . . . . . . . 7mA (maximum)

• Low-Power Shutdown mode . . . . . . . . . . . . 50μA (maximum)

• -7V to +12V common-mode input voltage range

• 5V tolerant logic inputs

• Thermal shutdown

• Acceptance tested to 75krad(Si) (LDR) wafer-by-wafer

• Radiation tolerance

- SEL/B immune to LETTH . . . . . . . . . . . . 86.4MeV•cm2/mg

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .75krad(Si)

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)