ISL71830SEHXSLASHSAMPLE中文资料瑞萨数据手册PDF规格书

特性 Features

▪ DLA SMD# 5962-15247

▪ Fabricated using P6 SOI process technology

▪ Rail-to-rail operation

▪ No latch-up

▪ Low rDS(ON): <120Ω (maximum)

▪ Single supply operation: 3V to 5.5V

• Adjustable logic threshold control

▪ Cold sparing capable: -0.4V to 7V

▪ Analog overvoltage range: -0.4V to 7V

▪ Switch input off leakage: 120nA

▪ Transition times (tAHL): 70ns

▪ Internally grounded metal lid

▪ Break-before-make switching

▪ ESD protection ≥5kV (HBM)

▪ Operating temperature range: -55°C to +125°C

▪ Radiation acceptance testing

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

Note: All lots were assurance tested to 75krad

(0.01rad(Si)/s) wafer-by-wafer.

▪ SEE hardness (see SEE report for details)

• SEL/SEB LETTH (V+ = 6.5V): 60MeV•cm2/mg