ISL71710MBZ-T中文资料瑞萨数据手册PDF规格书

厂商型号	ISL71710MBZ-T
功能描述	Radiation Tolerant Active-Input High Speed Digital Isolator
丝印标识	71710MBZ
封装外壳	NSOIC
文件大小	2.56022 Mbytes
页面数量	26 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-26 17:20:00
人工找货	ISL71710MBZ-T价格和库存，欢迎联系客服免费人工找货

Features

• Barrier Voltage Endurance

• 2.5kVRMS for 1 minute, 600VRMS continuous

(VDE V 0884-10 certified:

file 5022321-4880-0001)

• 1.5kVDC continuous

• 500VDC at 43MeV•cm2/mg SEDR

• UL 1577 recognized: file reference E483309

• 5V/3.3V CMOS/TTL compatible

• High speed: 150Mbps typical

• 10ns typical propagation delay

• 300ps typical pulse-width distortion

• 4ns typical propagation delay skew

• 50kV/μs typical common-mode transient immunity

• Low EMI/RFI emissions

• Excellent magnetic immunity

• Passes NASA low outgassing specifications

• NiPdAu-Ag leadframes (Pb-free, Sn-free)

• Full military temperature range operation

• TA = -55°C to +125°C

• TJ = -55°C to +150°C

• Radiation characterization

• Low Lose Rate (LDR) (0.01rad(Si)/s): 30krad(Si)

• SEE characterization

• No SEB/SEL LET, VDD = 7V: 43MeV•cm2/mg