Rad-Hard, 5.0V/3.3V 關-Processor Supervisory Circuits

Rad-Hard, 5.0V/3.3V µ-Processor Supervisory Circuits This family of devices are radiation hardened 5.0V/3.3V supervisory circuits that reducethe complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to d

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INTERSIL

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

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MOTOROLA

摩托罗拉

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

文件：37.3 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

文件：35.62 Kbytes 页数：2 Pages

POLYFET