ISL70219ASEHVXSLASHSAMPLE中文资料瑞萨数据手册PDF规格书

Features

• Electrically screened to DLA SMD# 5962-14226

• Low input offset voltage. . . . . . . . . . . . . . ±110μV, maximum

• Superb offset temperature coefficient. . .1μV/°C, maximum

• Input bias current . . . . . . . . . . . . . . . . . . . . ±15nA, maximum

• Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum

• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440μA

• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz

• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• Radiation environment

- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . . 86.4MeV•cm2/mg

- SET recovery time . . . . . . . . . . . ≤10μs at 60MeV•cm2/m

- SEL immune (SOI process)

- Total dose HDR (50 to 300rad(Si)/s). . . . . . . . 300krad(Si)

- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . .100krad(Si) *

* Product capability established by initial characterization. The

EH version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.