Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 页数：20 Pages

RENESAS

瑞萨

Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 页数：20 Pages

RENESAS

瑞萨

N-Channel 100 V (D-S) MOSFET

文件：188.21 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

isc N-Channel MOSFET Transistor

文件：297.22 Kbytes 页数：2 Pages

ISC

无锡固电