ISL70040SEHEV5Z中文资料瑞萨数据手册PDF规格书

厂商型号	ISL70040SEHEV5Z
功能描述	40V, 65A Enhancement Mode GaN Power Transistors
文件大小	521.659 Kbytes
页面数量	13 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-26 18:06:00
人工找货	ISL70040SEHEV5Z价格和库存，欢迎联系客服免费人工找货

Features

• Very low rDS(ON) 3.5mΩ (typical)

• Ultra low total gate charge 19nC (typical)

• ISL70020SEH radiation acceptance testing

○ High dose rate (50-300rad(Si)/s): 100krad(Si)

○ Low dose rate (0.01rad(Si)/s): 75krad(Si)

• ISL73020SEH radiation acceptance testing

○ Low dose rate (0.01rad(Si)/s): 75krad(Si)

• SEE hardness (see the SEE report for details)

○ SEL/SEB LETTH (VDS = 40V, VGS = 0V):

86.4MeV•cm2/mg

• Ultra small hermetically sealed 4 Ld Surface Mount

Device (SMD) package

○ Package area: 42mm2

• Full military-temperature range operation

○ TA = -55°C to +125°C

○ TJ = -55°C to +150°C

Applications

• Switching regulation

• Motor drives

• Relay drives

• Inrush protection

• Down hole drilling

• High reliability industrial