100V, 60A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 5mΩ (typical) • Ultra low total gate charge 14nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg • ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose rate

文件：564.94 Kbytes 页数：13 Pages

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100V, 60A Enhancement Mode GaN Power Transistor

Features ▪ Very low rDS(ON) 5mΩ (typical) ▪ Ultra low total gate charge 14nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose r

文件：527.73 Kbytes 页数：14 Pages

RENESAS

瑞萨

100V, 60A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 5mΩ (typical) • Ultra low total gate charge 14nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg • ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose rate

文件：564.94 Kbytes 页数：13 Pages

RENESAS

瑞萨

100V, 60A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 5mΩ (typical) • Ultra low total gate charge 14nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg • ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose rate

文件：564.94 Kbytes 页数：13 Pages

RENESAS

瑞萨

100V, 60A Enhancement Mode GaN Power Transistor

Features ▪ Very low rDS(ON) 5mΩ (typical) ▪ Ultra low total gate charge 14nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose r

文件：527.73 Kbytes 页数：14 Pages

RENESAS

瑞萨