ISL70003ASEHEV1Z中文资料瑞萨数据手册PDF规格书

Features

• Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer

• ±1 reference voltage over line, temperature, and radiation

• Integrated MOSFETs 31mΩPFET/21mΩ NFET

- 95 peak efficiency

• Externally adjustable loop compensation

• Supports DDR applications (VTT tracks VDDQ/2)

- Buffer amplifier for generating VREF voltage

- 3A current sinking capability

• Grounded lid eliminates charge build up

• IMON pin for output current monitoring

• Adjustable analog soft-start

• Diode emulation for increased efficiency at light loads

• 500kHz or 300kHz operating frequency

• Monotonic start-up into prebiased load

• Full military temperature range operation

- TA = -55°C to +125°C

- TJ = -55°C to +150°C

• Radiation Acceptance (See TID Report)

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)

• SEE hardness (See SEE report)

- SEB and SEL LETTH . . . . . . . . . . . . . . . . 86.4MeV•cm2/mg

- SET at LET 86.4MeV•cm2/mg . . . . . . . . . . . .<±3 ΔVOUT

- SEFI LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 60MeV•cm2/mg

• Electrically screened to DLA SMD 5962-14203