ISL6622BCBZ中文资料瑞萨数据手册PDF规格书

特性 Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

• Integrated LDO with Selectable Lower Gate Drive Voltage

for Light Load Efficiency Optimization

• 36V Internal Bootstrap Diode

• Advanced PWM Protocol (Patent Pending) to Support PSI

Operation

• Diode Emulation for Enhanced Light Load Efficiency

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Integrated UGATE-to-PHASE Resistor for Increased

Upper MOSFET Input Bus High dV/dt Immunity

• Pre-POR Overvoltage Protection at Start-Up and

Shutdown

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

- Bottom Copper Pad for Enhanced Heat Sinking

• Pb-Free (RoHS Compliant)