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ISL6620A集成电路(IC)的栅极驱动器规格书PDF中文资料

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厂商型号

ISL6620A

参数属性

ISL6620A 封装/外壳为8-SOIC(0.154",3.90mm 宽);包装为卷带(TR);类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers

封装外壳

8-SOIC(0.154",3.90mm 宽)

文件大小

223.45 Kbytes

页面数量

10

生产厂商

Intersil

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-4 11:16:00

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ISL6620A规格书详情

The ISL6620, ISL6620A is a high frequency MOSFET driver

designed to drive upper and lower power N-Channel

MOSFETs in a synchronous rectified buck converter topology.

The advanced PWM protocol of ISL6620, ISL6620A is

specifically designed to work with Intersil VR11.1 controllers

and combined with N-Channel MOSFETs, form a complete

core-voltage regulator solution for advanced microprocessors.

When ISL6620, ISL6620A detects a PSI protocol sent by an

Intersil VR11.1 controller, it activates Diode Emulation (DE)

operation; otherwise, it operates in normal Continuous

Conduction Mode (CCM) PWM mode.

The IC is biased by a single low voltage supply (5V),

minimizing driving losses in high MOSFET gate capacitance

and high switching frequency applications. Each driver is

capable of driving a 3nF load with less than 10ns rise/fall time.

Bootstrapping of the upper gate driver is implemented via an

internal low forward drop diode, reducing implementation cost,

complexity, and allowing the use of higher performance, cost

effective N-Channel MOSFETs.

To further enhance light load efficiency, ISL6620, ISL6620A

enables diode emulation operation during PSI mode. This

allows Discontinuous Conduction Mode (DCM) by detecting

when the inductor current reaches zero and subsequently

turning off the low side MOSFET to prevent it from sinking

current.

An advanced adaptive shoot-through protection is integrated

to prevent both the upper and lower MOSFETs from

conducting simultaneously and to minimize dead time. The

ISL6620, ISL6620A has a 20kΩ integrated high-side

gate-to-source resistor to prevent self turn-on due to high

input bus dV/dt.

特性 Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

• 36V Internal Bootstrap Schottky Diode

• Advanced PWM Protocol (Patent Pending) to Support PSI

Mode, Diode Emulation, Three-State Operation

• Diode Emulation For Enhanced Light Load Efficiency

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency

- 4A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• VCC Undervoltage Protection

• Enable Input and Power-On Reset

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• DFN Package:

- Compliant to JEDEC PUB95 MO-220

DFN - Dual Flat No Leads - Package Outline

- Near Chip Scale Package Footprint, which Improves

PCB Efficiency and has a Thinner Profile

• Pb-Free (RoHS Compliant)

Applications

• High Light Load Efficiency Voltage Regulators

• Core Regulators for Advanced Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

产品属性

  • 产品编号:

    ISL6620ACBZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 电流 - 峰值输出(灌入,拉出):

    2A,2A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    8ns,8ns

  • 工作温度:

    0°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-SOIC(0.154",3.90mm 宽)

  • 供应商器件封装:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL
24+
DFN
9600
原装现货,优势供应,支持实单!
询价
INTERSIL
23+
8-SOIC3.9mm
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
RENESAS(瑞萨)/IDT
2447
DFN-10(3x3)
315000
100个/管一级代理专营品牌!原装正品,优势现货,长期
询价
INTERSIL
23+
DFN-103x3
8000
只做原装现货
询价
Intersil
2318+
SOIC-8
6890
长期供货进口原装热卖现货
询价
INTERSIL
23+
DFN-103x3
50000
全新原装正品现货,支持订货
询价
Intersil(英特矽尔)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
Renesas Inc
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
Intersil
2023+
10-DFN
50000
原装现货
询价
Intersil
22+
10DFN
9000
原厂渠道,现货配单
询价