ISL6615AFRZ集成电路（IC）的栅极驱动器规格书PDF中文资料

The ISL6615A is a high-speed MOSFET driver optimized to drive

upper and lower power N-Channel MOSFETs in a synchronous

rectified buck converter topology. This driver, combined with an

Intersil Digital or Analog multiphase PWM controller, forms a

complete high frequency and high efficiency voltage regulator.

The ISL6615A drives both upper and lower gates over a range of

4.5V to 13.2V. This drive-voltage provides the flexibility necessary

to optimize applications involving trade-offs between gate charge

and conduction losses.

The ISL6615A features 6A typical sink current for the low-side

gate driver, enhancing the lower MOSFET gate hold-down

capability during PHASE node rising edge, preventing power loss

caused by the self turn-on of the lower MOSFET due to the high

dV/dt of the switching node.

An advanced adaptive zero shoot-through protection is integrated

to prevent both the upper and lower MOSFETs from conducting

simultaneously and to minimize the dead-time. The ISL6615A

includes an overvoltage protection feature operational before

VCC exceeds its turn-on threshold, at which the PHASE node is

connected to the gate of the low side MOSFET (LGATE). The

output voltage of the converter is then limited by the threshold of

the low side MOSFET, which provides some protection to the load

if the upper MOSFET(s) is shorted.

The ISL6615A also features an input that recognizes a

high-impedance state, working together with Intersil multiphase

PWM controllers to prevent negative transients on the controlled

output voltage when operation is suspended. This feature

eliminates the need for the Schottky diode that may be utilized in

a power system to protect the load from negative output voltage

damage.

特性 Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- LGATE Detection

- Auto-zero of rDS(ON) Conduction Offset Effect

• Adjustable Gate Voltage for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 1MHz)

- 6A LGATE Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Support 5V PWM Input Logic

• Tri-State PWM Input for Safe Output Stage Shutdown

• Tri-State PWM Input Hysteresis for Applications with Power

Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Expandable Bottom Copper PAD for Better Heat Spreading

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB Efficiency

and Thinner in Profile

• Pb-free (RoHS compliant)

Applications

• Optimized for POL DC/DC Converters for IBA Systems

• Core Regulators for Intel® and AMD® Microprocessors

• High Current Low-Profile DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

• Synchronous Rectification for Isolated Power Supplies