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ISL6614ACR集成电路(IC)的栅极驱动器规格书PDF中文资料

厂商型号 |
ISL6614ACR |
参数属性 | ISL6614ACR 封装/外壳为16-VQFN 裸露焊盘;包装为卷带(TR);类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 16QFN |
功能描述 | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
封装外壳 | 16-VQFN 裸露焊盘 |
文件大小 |
275.33 Kbytes |
页面数量 |
12 页 |
生产厂商 | Intersil |
网址 | |
数据手册 | |
更新时间 | 2025-10-16 17:38:00 |
人工找货 | ISL6614ACR价格和库存,欢迎联系客服免费人工找货 |
ISL6614ACR规格书详情
The ISL6614A integrates two ISL6613A MOSFET drivers and
is specifically designed to drive two Channel MOSFETs in a
synchronous rectified buck converter topology. These drivers
combined with HIP63xx or ISL65xx Multi-Phase Buck PWM
controllers and N-Channel MOSFETs form complete core
voltage regulator solutions for advanced microprocessors.
The ISL6614A drives both the upper and lower gates
simultaneously over a range from 5V to 12V. This drive
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during startup.
The ISL6614A also features a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
特性 Features
• Pin-to-pin Compatible with HIP6602 SOIC Family
• Quad N-Channel MOSFET Drives for Two Synchronous
Rectified Bridges
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat
No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves
PCB Efficiency and has a Thinner Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
产品属性
- 产品编号:
ISL6614ACR
- 制造商:
Renesas Electronics America Inc
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
卷带(TR)
- 驱动配置:
半桥
- 通道类型:
同步
- 栅极类型:
N 沟道 MOSFET
- 电压 - 供电:
10.8V ~ 13.2V
- 电流 - 峰值输出(灌入,拉出):
1.25A,2A
- 输入类型:
非反相
- 上升/下降时间(典型值):
26ns,18ns
- 工作温度:
0°C ~ 125°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
16-VQFN 裸露焊盘
- 供应商器件封装:
16-QFN(4x4)
- 描述:
IC GATE DRVR HALF-BRIDGE 16QFN
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL |
2450+ |
QFN |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
Intersil(英特矽尔) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
INTERSIL |
23+ |
QFN |
30000 |
全新原装,假一赔十,价格优势 |
询价 | ||
INTERSIL |
22+ |
QFN |
8000 |
原装正品支持实单 |
询价 | ||
INTERSIL |
25+ |
原装 |
2300 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
INTERSIL |
2402+ |
QFN |
8324 |
原装正品!实单价优! |
询价 | ||
INTERSIL |
17+ |
QFN |
6200 |
100%原装正品现货 |
询价 | ||
INTERSIL |
24+ |
NA/ |
4135 |
原装现货,当天可交货,原型号开票 |
询价 | ||
INTERSIL |
25+ |
QFN |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
Intersil |
22+ |
16QFN |
9000 |
原厂渠道,现货配单 |
询价 |