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ISL6613ACBZ集成电路(IC)的栅极驱动器规格书PDF中文资料

ISL6613ACBZ
厂商型号

ISL6613ACBZ

参数属性

ISL6613ACBZ 封装/外壳为8-SOIC(0.154",3.90mm 宽);包装为卷带(TR);类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

封装外壳

8-SOIC(0.154",3.90mm 宽)

文件大小

305.95 Kbytes

页面数量

12

生产厂商 Intersil Corporation
企业简称

INTERSIL

中文名称

Intersil Corporation官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-22 10:35:00

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ISL6613ACBZ规格书详情

The ISL6612A and ISL6613A are high frequency MOSFET

drivers specifically designed to drive upper and lower power

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with HIP63xx or

ISL65xx Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

The ISL6612A drives the upper gate to 12V, while the lower

gate can be independently driven over a range from 5V to

12V. The ISL6613A drives both upper and lower gates over

a range of 5V to 12V. This drive-voltage provides the

flexibility necessary to optimize applications involving

trade-offs between gate charge and conduction losses.

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during initial startup.

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

Features

• Pin-to-pin Compatible with HIP6601 SOIC family

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- Auto-zero of rDS(ON) Conduction Offset Effect

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications with

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Core Regulators for Intel® and AMD® Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

产品属性

  • 产品编号:

    ISL6613ACBZ

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    10.8V ~ 13.2V

  • 电流 - 峰值输出(灌入,拉出):

    1.25A,2A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    26ns,18ns

  • 工作温度:

    0°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-SOIC(0.154",3.90mm 宽)

  • 供应商器件封装:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL
20+
SOP8
2420
进口原装现货,假一赔十
询价
Intersil
22+
8SOIC
9000
原厂渠道,现货配单
询价
INTERSIL
22+
SOP8
8000
原装正品支持实单
询价
intersil
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
Intersil
24+
8-SOIC
65200
一级代理/放心采购
询价
Intersil
25+
8-SOIC0.1543.90mm
4258
原装正品 价格优势
询价
INTERSIL
24+
165
询价
INTERSIL
23+
SOP8
50000
全新原装正品现货,支持订货
询价
INTERSIL
24+
SOP8
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
Intersil
2318+
SOIC-8
6890
长期供货进口原装热卖现货
询价