ISL6613集成电路（IC）的栅极驱动器规格书PDF中文资料

The ISL6612 and ISL6613 are high frequency MOSFET

drivers specifically designed to drive upper and lower power

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with HIP63xx or

ISL65xx Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

The ISL6612 drives the upper gate to 12V, while the lower

gate can be independently driven over a range from 5V to

12V. The ISL6613 drives both upper and lower gates over a

range of 5V to 12V. This drive-voltage provides the flexibility

necessary to optimize applications involving trade-offs

between gate charge and conduction losses.

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs from

conducting simultaneously and to minimize the dead time.

These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at which

the PHASE node is connected to the gate of the low side

MOSFET (LGATE). The output voltage of the converter is then

limited by the threshold of the low side MOSFET, which

provides some protection to the microprocessor if the upper

MOSFET(s) is shorted during startup. The over-temperature

protection feature prevents failures resulting from excessive

power dissipation by shutting off the outputs when its junction

temperature exceeds +150°C (typically). The driver resets once

its junction temperature returns to +108°C (typically).

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

Features

• Pin-to-pin Compatible with HIP6601 SOIC family for Better

Performance and Extra Protection Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- Auto-zero of rDS(ON) Conduction Offset Effect

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Over Temperature Protection (OTP) with +42°C

Hysteresis

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free Available (RoHS Compliant)

Applications

• Core Regulators for Intel® and AMD® Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD