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ISL6609CRZ中文资料PDF规格书

ISL6609CRZ
厂商型号

ISL6609CRZ

参数属性

ISL6609CRZ 封装/外壳为8-VQFN 裸露焊盘;包装为管件;类别为集成电路(IC) > 栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8QFN

功能描述

Synchronous Rectified MOSFET Driver

文件大小

1.67131 Mbytes

页面数量

12

生产厂商 Intersil Corporation
企业简称

Intersil瑞萨电子

中文名称

瑞萨电子株式会社官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-29 11:25:00

ISL6609CRZ规格书详情

The ISL6609, ISL6609A is a high frequency, MOSFET driver

optimized to drive two N-Channel power MOSFETs in a

synchronous-rectified buck converter topology. This driver

combined with an Intersil ISL63xx or ISL65xx multiphase

PWM controller forms a complete single-stage core-voltage

regulator solution with high efficiency performance at high

switching frequency for advanced microprocessors.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3nF load with less than

10ns rise/fall time. Bootstrapping of the upper gate driver is

implemented via an internal low forward drop diode,

reducing implementation cost, complexity, and allowing the

use of higher performance, cost effective N-Channel

MOSFETs. Adaptive shoot-through protection is integrated

to prevent both MOSFETs from conducting simultaneously.

The ISL6609, ISL6609A features 4A typical sink current for

the lower gate driver, enhancing the lower MOSFET gate

hold-down capability during PHASE node rising edge,

preventing power loss caused by the self turn-on of the lower

MOSFET due to the high dV/dt of the switching node.

The ISL6609, ISL6609A also features an input that

recognizes a high-impedance state, working together with

Intersil multiphase PWM controllers to prevent negative

transients on the controlled output voltage when operation is

suspended. This feature eliminates the need for the schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage. In addition, the

ISL6609A’s bootstrap function is designed to prevent the

BOOT capacitor from overcharging, should excessively large

negative swings occur at the transitions of the PHASE node.

Features

• Drives Two N-Channel MOSFETs

• Adaptive Shoot-Through Protection

• 0.4Ω On-Resistance and 4A Sink Current Capability

• Supports High Switching Frequency

- Fast Output Rise and Fall

- Ultra Low Three-State Hold-Off Time (20ns)

• ISL6605 Replacement with Enhanced Performance

• BOOT Capacitor Overcharge Prevention (ISL6609A)

• Low VF Internal Bootstrap Diode

• Low Bias Supply Current

• Enable Input and Power-On Reset

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Core Voltage Supplies for Intel® and AMD®

Microprocessors

• High Frequency Low Profile High Efficiency DC/DC

Converters

• High Current Low Voltage DC/DC Converters

• Synchronous Rectification for Isolated Power Supplies

产品属性

  • 产品编号:

    ISL6609CRZ

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    管件

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 逻辑电压 - VIL,VIH:

    1V,2V

  • 电流 - 峰值输出(灌入,拉出):

    -,4A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    8ns,8ns

  • 工作温度:

    0°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-VQFN 裸露焊盘

  • 供应商器件封装:

    8-QFN(3x3)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8QFN

供应商 型号 品牌 批号 封装 库存 备注 价格
ADI
2022+
SSOP-20
6000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Intersil
21+
8QFN
13880
公司只售原装,支持实单
询价
INTERSI
21+
QFN
12588
原装正品,自己库存 假一罚十
询价
INTERSIL
23+
QFN
6000
专注配单,只做原装进口现货
询价
Intersil
2318+
VQFN-8
6890
长期供货进口原装热卖现货
询价
INTERSIL
23+
QFN
50000
全新原装正品现货,支持订货
询价
INTERSIL
22+
QFN-8
9845
只做原装正品现货!或订货假一赔十!
询价
intersil
22+
QFN
2679
原装优势!绝对公司现货!可长期供货!
询价
INTERSIL
24+
QFN
5000
只做原装公司现货
询价
Intersil
22+
8QFN
9000
原厂渠道,现货配单
询价