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ISL6609ACRZ集成电路(IC)的栅极驱动器规格书PDF中文资料

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厂商型号

ISL6609ACRZ

参数属性

ISL6609ACRZ 封装/外壳为8-VQFN 裸露焊盘;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8QFN

功能描述

Synchronous Rectified MOSFET Driver

封装外壳

8-VQFN 裸露焊盘

文件大小

1.67131 Mbytes

页面数量

12

生产厂商

Intersil

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-11 15:22:00

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ISL6609ACRZ规格书详情

The ISL6609, ISL6609A is a high frequency, MOSFET driver

optimized to drive two N-Channel power MOSFETs in a

synchronous-rectified buck converter topology. This driver

combined with an Intersil ISL63xx or ISL65xx multiphase

PWM controller forms a complete single-stage core-voltage

regulator solution with high efficiency performance at high

switching frequency for advanced microprocessors.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3nF load with less than

10ns rise/fall time. Bootstrapping of the upper gate driver is

implemented via an internal low forward drop diode,

reducing implementation cost, complexity, and allowing the

use of higher performance, cost effective N-Channel

MOSFETs. Adaptive shoot-through protection is integrated

to prevent both MOSFETs from conducting simultaneously.

The ISL6609, ISL6609A features 4A typical sink current for

the lower gate driver, enhancing the lower MOSFET gate

hold-down capability during PHASE node rising edge,

preventing power loss caused by the self turn-on of the lower

MOSFET due to the high dV/dt of the switching node.

The ISL6609, ISL6609A also features an input that

recognizes a high-impedance state, working together with

Intersil multiphase PWM controllers to prevent negative

transients on the controlled output voltage when operation is

suspended. This feature eliminates the need for the schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage. In addition, the

ISL6609A’s bootstrap function is designed to prevent the

BOOT capacitor from overcharging, should excessively large

negative swings occur at the transitions of the PHASE node.

特性 Features

• Drives Two N-Channel MOSFETs

• Adaptive Shoot-Through Protection

• 0.4Ω On-Resistance and 4A Sink Current Capability

• Supports High Switching Frequency

- Fast Output Rise and Fall

- Ultra Low Three-State Hold-Off Time (20ns)

• ISL6605 Replacement with Enhanced Performance

• BOOT Capacitor Overcharge Prevention (ISL6609A)

• Low VF Internal Bootstrap Diode

• Low Bias Supply Current

• Enable Input and Power-On Reset

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Core Voltage Supplies for Intel® and AMD®

Microprocessors

• High Frequency Low Profile High Efficiency DC/DC

Converters

• High Current Low Voltage DC/DC Converters

• Synchronous Rectification for Isolated Power Supplies

产品属性

  • 产品编号:

    ISL6609ACRZ

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 逻辑电压 - VIL,VIH:

    1V,2V

  • 电流 - 峰值输出(灌入,拉出):

    -,4A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    8ns,8ns

  • 工作温度:

    0°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-VQFN 裸露焊盘

  • 供应商器件封装:

    8-QFN(3x3)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8QFN

供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL
22+
QFN8
12245
现货,原厂原装假一罚十!
询价
INTERSIL
23+
QFN
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
INTERSIL
24+
QFN
9600
原装现货,优势供应,支持实单!
询价
INTERSIL
22+
QFN
8000
原装正品支持实单
询价
INTERSIL
23+
QFN
8000
只做原装现货
询价
INTERSIL
23+
QFN
7000
询价
INTERSIL
2447
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
RENESAS(瑞萨)/IDT
2022+原装正品
QFN-8(3x3)
18000
支持工厂BOM表配单 公司只做原装正品货
询价
INTERSIL
24+
QFN8
47186
郑重承诺只做原装进口现货
询价
Intersil
22+
8QFN
9000
原厂渠道,现货配单
询价