ISL6605CB集成电路(IC)的栅极驱动器规格书PDF中文资料

厂商型号 |
ISL6605CB |
参数属性 | ISL6605CB 封装/外壳为8-SOIC(0.154",3.90mm 宽);包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC |
功能描述 | Synchronous Rectified MOSFET Driver |
封装外壳 | 8-SOIC(0.154",3.90mm 宽) |
文件大小 |
266.39 Kbytes |
页面数量 |
9 页 |
生产厂商 | Intersil Corporation |
企业简称 |
INTERSIL |
中文名称 | Intersil Corporation官网 |
原厂标识 | ![]() |
数据手册 | |
更新时间 | 2025-6-30 20:00:00 |
人工找货 | ISL6605CB价格和库存,欢迎联系客服免费人工找货 |
ISL6605CB规格书详情
The ISL6605 is a high frequency, MOSFET driver optimized
to drive two N-Channel power MOSFETs in a synchronousrectified buck converter topology. This driver combined with
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM
controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and
minimizes low driver switching losses for high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3000pF load with an 8ns
propagation delay and less than 10ns transition time. This
product implements bootstrapping on the upper gate with an
internal bootstrap Schottky diode, reducing implementation
cost, complexity, and allowing the use of higher
performance, cost effective N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
The ISL6605 features 4A typical sink current for the lower
gate driver, which is capable of holding the lower MOSFET
gate during the Phase node rising edge to prevent shootthrough power loss caused by the high dv/dt of the Phase
node.
The ISL6605 also features a Three-State PWM input that,
working together with Intersil multi-phase PWM controllers,
will prevent a negative transient on the output voltage when
the output is being shut down. This feature eliminates the
Schottky diode that is usually seen in a microprocessor
power system for protecting the microprocessor from
reversed-output-voltage damage.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• 0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
- Fast Output Rise and Fall Time
- Ultra Low Propagation Delay 8ns
• Three-State PWM Input for Power Stage Shutdown
• Internal Bootstrap Schottky Diode
• Low Bias Supply Current (5V, 30µA)
• Enable Input
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel® and AMD®
Microprocessors
• High Frequency Low Profile DC/DC Converters
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
产品属性
- 产品编号:
ISL6605CB
- 制造商:
Renesas Electronics America Inc
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
管件
- 驱动配置:
半桥
- 通道类型:
同步
- 栅极类型:
N 沟道 MOSFET
- 电压 - 供电:
4.5V ~ 5.5V
- 逻辑电压 - VIL,VIH:
1V,2V
- 电流 - 峰值输出(灌入,拉出):
2A,2A
- 输入类型:
非反相
- 上升/下降时间(典型值):
8ns,8ns
- 工作温度:
0°C ~ 125°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
8-SOIC(0.154",3.90mm 宽)
- 供应商器件封装:
8-SOIC
- 描述:
IC GATE DRVR HALF-BRIDGE 8SOIC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL |
24+ |
NA/ |
7593 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
INTERSIL |
02+ |
SOP/8 |
100 |
原装现货海量库存欢迎咨询 |
询价 | ||
INTERSIL |
20+ |
SOP8 |
2960 |
诚信交易大量库存现货 |
询价 | ||
INTERSIL |
24+ |
SOP-8 |
1400 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
INTERSIL |
2016+ |
SOP8 |
2000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
INTERSIL |
23 |
SOP-8 |
25000 |
代理原装现货 假一赔十 |
询价 | ||
INTERSIL |
23+ |
SOP8 |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
INTERSI |
2016+ |
SOP8 |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
INS |
23+ |
NA |
3386 |
专做原装正品,假一罚百! |
询价 | ||
INTERSIL |
22+ |
SOP8 |
20000 |
深圳原装现货正品有单价格可谈 |
询价 |