ISL6594D集成电路（IC）的栅极驱动器规格书PDF中文资料

The ISL6594D is high frequency MOSFET driver specifically

designed to drive upper and lower power N-Channel

MOSFETs in a synchronous rectified buck converter

topology. This driver combined with the ISL6594D Digital

Multi-Phase Buck PWM controller and N-Channel MOSFETs

forms a complete core-voltage regulator solution for

advanced microprocessors.

The ISL6594D drives both upper and lower gates over a range

of 4.5V to 13.2V. This drive-voltage provides the flexibility

necessary to optimize applications involving trade-offs between

gate charge and conduction losses.

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. The ISL6594D includes an overvoltage protection

feature operational before VCC exceeds its turn-on

threshold, at which the PHASE node is connected to the

gate of the low side MOSFET (LGATE). The output voltage

of the converter is then limited by the threshold of the low

side MOSFET, which provides some protection to the

microprocessor if the upper MOSFET(s) is shorted.

The ISL6594D also features an input that recognizes a

high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the

controlled output voltage when operation is suspended. This

feature eliminates the need for the Schottky diode that may

be utilized in a power system to protect the load from

negative output voltage damage.

Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Pin-to-pin Compatible with ISL6596

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- Auto-zero of rDS(ON) Conduction Offset Effect

• Adjustable Gate Voltage for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Optimized for 3.3V PWM Input

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Optimized for POL DC/DC Converters for IBA Systems

• Core Regulators for Intel® and AMD® Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD