ISL6208BIRZ-T集成电路（IC）的栅极驱动器规格书PDF中文资料

The ISL6208 and ISL6208B are high frequency, dual MOSFET

drivers, optimized to drive two N-Channel power MOSFETs in a

synchronous-rectified buck converter topology. They are

especially suited for mobile computing applications that

require high efficiency and excellent thermal performance.

These drivers, combined with an Intersil multiphase Buck

PWM controller, form a complete single-stage core-voltage

regulator solution for advanced mobile microprocessors.

ISL6208 and ISL6208B have the same function but different

packages. The descriptions in this datasheet are based on

ISL6208 and also apply to ISL6208B.

The ISL6208 features 4A typical sinking current for the lower

gate driver. This current is capable of holding the lower

MOSFET gate off during the rising edge of the Phase node. This

prevents shoot-through power loss caused by the high dv/dt of

phase voltages. The operating voltage matches the 30V

breakdown voltage of the MOSFETs commonly used in mobile

computer power supplies.

The ISL6208 also features a three-state PWM input that,

working together with Intersil’s multiphase PWM controllers,

will prevent negative voltage output during CPU shutdown. This

feature eliminates a protective Schottky diode usually seen in

a microprocessor power systems.

MOSFET gates can be efficiently switched up to 2MHz using

the ISL6208. Each driver is capable of driving a 3000pF load

with propagation delays of 8ns and transition times under

10ns. Bootstrapping is implemented with an internal Schottky

diode. This reduces system cost and complexity, while allowing

the use of higher performance MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

A diode emulation feature is integrated in the ISL6208 to

enhance converter efficiency at light load conditions. This

feature also allows for monotonic start-up into pre-biased

outputs. When diode emulation is enabled, the driver will allow

discontinuous conduction mode by detecting when the

inductor current reaches zero and subsequently turning off the

low side MOSFET gate.

特性 Features

• Dual MOSFET drives for synchronous rectified bridge

• Adaptive shoot-through protection

• 0.5 On-resistance and 4A sink current capability

• Supports high switching frequency up to 2MHz

- Fast output rise and fall time

- Low propagation delay

• Three-state PWM input for power stage shutdown

• Internal bootstrap schottky diode

• Low bias supply current (5V, 80µA)

• Diode emulation for enhanced light load efficiency and prebiased start-up applications

• VCC POR (power-on-reset) feature integrated

• Low three-state shutdown holdoff time (typical 160ns)

• Pin-to-pin compatible with ISL6207

• QFN and DFN package:

- Compliant to JEDEC PUB95 MO-220

QFN - Quad flat no leads - package outline

DFN - Dual flat no leads - package outline

- Near chip scale package footprint, which improves PCB

efficiency and has a thinner profile

• Pb-free (RoHS compliant)

Applications

• Core voltage supplies for Intel® and AMD® mobile

microprocessors

• High frequency low profile DC/DC converters

• High current low output voltage DC/DC converters

• High input voltage DC/DC converters