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ISL6144IRZA中文资料PDF规格书

ISL6144IRZA
厂商型号

ISL6144IRZA

参数属性

ISL6144IRZA 封装/外壳为20-VQFN 裸露焊盘;包装为管件;类别为集成电路(IC) > OR 控制器,理想二极管;ISL6144IRZA应用范围:N+1 电源,电信/数据通信系统;产品描述:IC OR CTRLR N+1 20QFN

功能描述

High Voltage ORing MOSFET Controller

文件大小

1.18189 Mbytes

页面数量

30

生产厂商 Intersil Corporation
企业简称

Intersil瑞萨电子

中文名称

瑞萨电子株式会社官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-12 9:08:00

ISL6144IRZA规格书详情

The ISL6144 ORing MOSFET Controller and a suitably sized

N-Channel power MOSFET(s) increases power distribution

efficiency and availability when replacing a power ORing diode

in high current applications.

In a multiple supply, fault tolerant, redundant power distribution

system, paralleled similar power supplies contribute equally to

the load current through various power sharing schemes.

Regardless of the scheme, a common design practice is to

include discrete ORing power diodes to protect against reverse

current flow should one of the power supplies develop a

catastrophic output short to ground. In addition, reverse current

can occur if the current sharing scheme fails and an individual

power supply voltage falls significantly below the others.

Although the discrete ORing diode solution has been used for

some time and is inexpensive to implement, it has some

drawbacks. The primary downside is the increased power

dissipation loss in the ORing diodes as power requirements for

systems increase. Another disadvantage when using an ORing

diode would be failure to detect a shorted or open ORing diode,

jeopardizing power system reliability. An open diode reduces

the system to single point of failure while a diode short might

pose a hazard to technical personnel servicing the system

while unaware of this failure.

The ISL6144 can be used in 9V to 75V systems having similar

power sources and has an internal charge pump to provide a

floating gate drive for the N-Channel ORing MOSFET. The High

Speed (HS) Comparator protects the common bus from

individual power supply shorts by turning off the shorted feed’s

ORing MOSFET in less than 300ns and ensuring low reverse

current.

An external resistor-programmable detection level for the HS

Comparator allows users to set the N-Channel MOSFET

“VOUT - VIN” trip point to adjust control sensitivity to power

supply noise.

The Hysteretic Regulating (HR) Amplifier provides a slow turnoff of the ORing MOSFET. This turn-off is achieved in less than

100μs when one of the sourcing power supplies is shutdown

slowly for system diagnostics, ensuring zero reverse current.

This slow turn-off mechanism also reacts to output voltage

droop, degradation, or power-down.

An open drain FAULT pin will indicate that a fault has occurred.

The fault detection circuitry covers different types of failures;

including dead short in the sourcing supply, a short of any two

ORing MOSFET terminals, or a blown fuse in the power

distribution path.

Features

• Wide Supply Voltage Range +9V to +75V

• Transient Rating to +100V

• Reverse Current Fault Isolation

• Internal Charge Pump Allows the use of N-Channel

MOSFET

• HS Comparator Provides Very Fast <0.3µs Response

Time to Dead Shorts on Sourcing Supply. HS Comparator

also has Resistor-adjustable Trip Level

• HR Amplifier allows Quiet, <100µs MOSFET Turn-off for

Power Supply Slow Shut Down

• Open Drain, Active Low Fault Output with 120µs Delay

• Provided in Packages Compliant to UL60950 (UL1950)

Creepage Requirements

• QFN Package:

- Compliant to JEDEC PUB95 MO-220

QFN - Quad Flat No Leads - Package Outline

- Near Chip Scale Package footprint, which improves

PCB efficiency and has a thinner profile

• Pb-Free (RoHS Compliant)

Applications

• ORing MOSFET Control in Power Distribution Systems

• N + 1 Redundant Distributed Power Systems

• File and Network Servers (12V and 48V)

• Telecom/Datacom Systems

产品属性

  • 产品编号:

    ISL6144IRZA

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > OR 控制器,理想二极管

  • 包装:

    管件

  • 类型:

    N+1 ORing 控制器

  • FET 类型:

    N 通道

  • 比率 - 输入:

    N:1

  • 内部开关:

  • 电压 - 供电:

    9V ~ 75V

  • 应用:

    N+1 电源,电信/数据通信系统

  • 工作温度:

    -40°C ~ 105°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    20-VQFN 裸露焊盘

  • 供应商器件封装:

    20-QFN(5x5)

  • 描述:

    IC OR CTRLR N+1 20QFN

供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL
22+
QFN20
93
诚信经营..品质保证..价格优势
询价
Renesas Electronics America In
22+/23+
原厂封装
7500
原装进口公司现货假一赔百
询价
Intersil
22+
20-QFN-EP (5x5)
3216
原装正品 价格优势
询价
INTERSIL
22+
QFN20
140
原装现货假一赔十
询价
intersil
dc0518
原厂封装
600
INSTOCK:60/tube/lcc
询价
INTERSIL
2339+
QFN20
32280
原装现货 假一罚十!十年信誉只做原装!
询价
Renesas Electronics America In
21+
NA
12000
正品专卖,进口原装深圳现货
询价
Intersil
23+
20-QFN
6672
询价
Renesas
21+
QFN
600
全新原装鄙视假货15118075546
询价
Renesa
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价