짹16.5kV ESD Protected, 125째C, 3.0V to 5.5V, SOT-23/TDFN Packaged, Low Power, RS-485/RS-422 Transmitters

文件：641.82 Kbytes 页数：17 Pages

Intersil

丝印：96F；Package：8LdTDFN；High node count systems

文件：986.84 Kbytes 页数：17 Pages

RENESAS

瑞萨

Package：8-WFDFN 裸露焊盘；包装：卷带（TR） 类别：集成电路（IC） 驱动器，接收器，收发器 描述：IC DRIVER 1/0 8TDFN

Renesas Electronics America Inc

짹16.5kV ESD Protected, 125째C, 3.0V to 5.5V, SOT-23/TDFN Packaged, Low Power, RS-485/RS-422 Transmitters

文件：641.82 Kbytes 页数：17 Pages

Intersil

High node count systems

文件：986.84 Kbytes 页数：17 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance

文件：422.24 Kbytes 页数：8 Pages

NEC

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