ISGM2022

Half Bridge Module

FEATURES ·VCE(sat)withpositivetemperaturecoefficient ·LowVCE(sat) ·Lowswitchinglosses ·Highcurrentcapability ·Shortcircuitrated APPLICATIONS ·Motordrives ·Servodrives

KIA2022AFN

BIPOLARLINEARINTEGRATEDCIRCUIT(1.5VAM/FMMPX)

1.5VAM/FM+MPX(forDigitalTurningSystem) TheKIA2022AFNisAM/FMIF+MPXsystemIC,whichisdesignedforDTSRadios. ThisisincludedmanyfunctionsandthesecanbeusedfordigitaltuningsystemwithIFcounter.

KPC2022

Photocoupler(ThesePhotocouplerscosistofaGalliumArsenideInfraredEmitting)

KTC2022D

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •LowCollector-EmitterSaturationVoltage :VCE(sat)=-2.0V(Max.). •ComplementarytoKTA1042D/L.

KTC2022D

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage V(BR)CEO=100V(Min) ·GoodLinearityofhFE ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Lowcollector-to-emittersaturationvoltage. ·Fastswitchingspeed

KTC2022D

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=2.0V(Max)@IC=4A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

KTC2022I

SiliconNPNtransistorinaTO-251PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-251PlasticPackage. Features Lowcollector-emittersaturationvoltage,complementarytoKTA1042I. Applications Generalpurposeamplifier.

KTC2022L

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •LowCollector-EmitterSaturationVoltage :VCE(sat)=-2.0V(Max.). •ComplementarytoKTA1042D/L.

KTC2022L

EPITAXIALPLANARNPNTRANSISTOR

KTC2022L

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=2.0V(Max)@IC=4A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications