N-Channel MOSFET Transistor

DESCRIPTION · Drain Current -ID= 32A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 20V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch

文件：509.51 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR

DRIVER APPLICATIONS. FEATURES • AF amplifier, solenoid drivers, LED drivers. • Darlington connection. • High DC current gain. • Very small-sized package permitting sets to be made smaller and slimer. • Complementary to KTD1854T.

文件：83.56 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

文件：81.5 Kbytes 页数：4 Pages

SANYO

三洋

짹15kV ESD-Protected Touch-Screen Controllers Include DAC and Keypad Controller

文件：706.06 Kbytes 页数：44 Pages

MAXIM

美信