N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 36A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · High Speed Power Switching

文件：340.51 Kbytes 页数：3 Pages

ISC

无锡固电

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of hFE. • Complementary to KTD2060.

文件：356.82 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Integrated Circuit Dual Audio Power Amplifier, 5.8W/Channel

Description: The NTE1368 is an integrated circuit in a 12–Lead SIP type package designed for dual, low–frequency, high power amplifier applications. This device requires few external components, thus enabling high density mounting. Design for heat radiation is easy due to low thermal resistance

文件：22.9 Kbytes 页数：2 Pages

NTE

PanelLink /HDCP Transmitters

文件：163.03 Kbytes 页数：2 Pages

SILICONIMAGE

矽映