isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -140A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= -10V DESCRIPTION · Motor Controls · DC-DC Converter, · Switching Power Supplies

文件：320.75 Kbytes 页数：2 Pages

ISC

无锡固电

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

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MOTOROLA

摩托罗拉

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

文件：151.61 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

文件：151.61 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司