N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V APPLICATIONS · Switching

文件：357.78 Kbytes 页数：2 Pages

ISC

无锡固电

Low Power RTC with Battery Backed SRAM and Event Detection

Low Power RTC with Battery Backed SRAM and Event Detection The ISL1219 device is a low power real time clock with Event Detect and Time Stamp function, timing and crystal compensation, clock/calendar, power fail indicator, periodic or polled alarm, intelligent battery backup switching and 2 Byte

文件：643.4 Kbytes 页数：24 Pages

INTERSIL

High-Accuracy RTC Modules, Feature-Rich RTCs

文件：768.82 Kbytes 页数：6 Pages

INTERSIL

Providing high-performance solutions for every link in the signal chain

文件：9.95425 Mbytes 页数：44 Pages

INTERSIL